Crystal Growth Furnaces

MRF offers a line of Crystal Growth Furnaces using the Czochralski (CZ), Bridgman or Stepanov method, often used for growing semiconductor ingots of Silicon, Sapphire or Germanium. Typical layouts are vertical crystal pullers with front-opening door access. MRF furnaces are highly stable with an excellent temperature gradient and are ideally suited for growing crystals of lab scale sizes, 50mm diameter to 200mm high. Puller controls are high accuracy and fully programmable, including seed rotation. A crystal growing add-on kit is also available on select arc melt furnaces and front loading furnaces.

Furnace chambers are high vacuum-rated, and can be run in air, partial pressure, vacuum or inert gas. Maximum temperatures up to 2600°C.

MRF has also built several custom designs for applications such as gem growth and Silicon Carbide Crystal Growth.*

Temperatures up to 2600°C
Standard and custom designs
Excellent Temperature uniformity and gradient
Czochralski (CZ), Bridgman, Stepanov and other methods

4″ or 8″ of fully programmable high accuracy travel
Seed or melt rotation
Ceramic, Graphite or Metallic Hot zones
Available as an add-on kit on select lab-sized furnace models

* MRF sells furnace equipment to grow crystals, our specialty lies in building quality high temperature furnaces. Our furnaces are used in countless applications, however we are not process experts and cannot guarantee every process our furnaces are capable of. It is end users responsibility to specify and use our equipment in such ways to guarantee successful applications.

Crystal Growth Furnaces

Recent Posts